Analysis of slow traps centres in submicron MOSFETs by random telegraph signal technique
暂无分享,去创建一个
[1] Andrew G. Glen,et al. APPL , 2001 .
[2] M. Dutoit,et al. Random telegraph signals in deep submicron n-MOSFET's , 1994 .
[3] Collins,et al. Anomalous telegraph noise in small-area silicon metal-oxide-semiconductor field-effect transistors. , 1988, Physical review. B, Condensed matter.
[4] P. Winokur,et al. Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors , 1986 .
[5] L.K.J. Vandamme,et al. On the anomalous behavior of the relative amplitude of RTS noise , 1998 .
[6] P.K. Ko,et al. Random telegraph noise of deep-submicrometer MOSFETs , 1990, IEEE Electron Device Letters.
[7] Michael J. Uren,et al. Individual defects at the Si:SiO2 interface , 1989 .
[8] M. J. Kirton,et al. Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise , 1989 .
[9] Z. Çelik-Butler,et al. A method for locating the position of oxide traps responsible for random telegraph signals in submicron MOSFETs , 2000 .
[10] H. J. Hagger,et al. Solid State Electronics , 1960, Nature.
[11] S. T. Hsu. Bistable noise in p-n junctions☆ , 1971 .
[12] K. Kandiah,et al. A physical model for random telegraph signal currents in semiconductor devices , 1989 .
[13] Max J. Schulz,et al. Individual, attractive defect centers in the SiO2-Si interface of μm-sized MOSFETs , 1991 .
[14] C. Hu,et al. Hot-electron-induced traps studied through the random telegraph noise , 1991, IEEE Electron Device Letters.