Investigation of Self-Heating Effect on Ballistic Transport Characterization for Si FinFETs Featuring Ultrafast Pulsed IV Technique

In this paper, we investigate the carrier transport characteristics of the ultrascaled Si FinFETs. Traditional dc characterization technique is compared with the ultrafast pulsed IV method. Due to the severe self-heating effect introduced in the characterization process, the ballistic transport parameters extracted using dc method would show essential discrepancies from those in the real high-speed IC circuits. Therefore, an ultrafast pulsed IV measurement technique is proposed for accurate ballistic transport characterization. Furthermore, since the series resistance (<inline-formula> <tex-math notation="LaTeX">${R}_{{\textbf {SD}}}$ </tex-math></inline-formula>) of the Si FinFETs is temperature-dependent, a modified backscattering model is adopted to extract the ballistic transport parameters without the influence of the temperature-variant <inline-formula> <tex-math notation="LaTeX">${R}_{{\textbf {SD}}}$ </tex-math></inline-formula>. A ballisticity scaling model was established to predict the scalability of the ballistic transport parameters. It is found that very high ballisticity could be achieved for FinFETs with sub-10-nm technology nodes.

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