SEE analysis of digital InP-based HBT circuits at gigahertz frequencies
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[1] R. Koga,et al. Single event upset at gigahertz frequencies , 1994 .
[2] Suman Datta,et al. Simulation and design of InAlAs/InGaAs pnp heterojunction bipolar transistors , 1998 .
[3] P. W. Marshall,et al. Effects of low-temperature buffer-layer thickness and growth temperature on the SEE sensitivity of GaAs HIGFET circuits , 1997 .
[4] L. Dayaratna,et al. Single event upset characteristics of some digital integrated frequency synthesizers , 1999, 1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463).
[5] Tae-Yeoul Yun,et al. Absolute potential measurements inside microwave digital IC's using a micromachined photoconductive sampling probe , 1998 .
[6] Jim Nohava,et al. Heavy ion SEU immunity of a GaAs complementary HIGFET circuit fabricated on a low temperature grown buffer layer , 1995 .
[7] M. Shur,et al. A tunneling emitter bipolar transistor , 1986, IEEE Electron Device Letters.
[8] E. Weber,et al. Electronic properties of low-temperature InP , 1993 .
[9] InxGa1−xAs (x=0.25–0.35) grown at low temperature , 1993 .
[10] R. Reed,et al. Single event effects in circuit-hardened SiGe HBT logic at gigabit per second data rates , 2000 .
[11] J. F. Salzman,et al. Charge collection and SEU sensitivity for Ga/As bipolar devices , 1989 .
[12] S. Buchner,et al. Charge-collection mechanisms of AlGaAs/GaAs HBTs , 1997 .
[13] M. W. Pierce,et al. AlInAs/GaInAs HBT IC technology , 1990, IEEE Proceedings of the Custom Integrated Circuits Conference.
[14] Cheryl J. Dale,et al. Space radiation effects on optoelectronic materials and components for a 1300 nm fiber optic data bus , 1992 .