论文信息 - Design of FinFET Based LNA with reduction of Corner Effects

Design of FinFET Based LNA with reduction of Corner Effects

The influence of the corner effects on the FinFET that is designed with 30nm gate length technology is investigated. Heavy doping at the corners is employed and its effect on ON-current is studied. A mixed mode device, low noise amplifier is to be constructed with the modeled FinFET and using Source Degeneration Inductor. Noise figure and gain which are key parameters for the LNA are studied by varying the geometric parameters of the device. Also, the metals for the contacts which induce delay in the circuit are replaced with vias. The gain and noise figure of the high frequency LNA is studied using the Silvaco

P. Aruna Priya | B. Charan Teja | J. K. Kasturi | D. John Tiruvadigal

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