Highly Efficient New Hole Injection Materials for OLEDs Based on Dimeric Phenothiazine and Phenoxazine Derivatives

New hole injection layer (HIL) materials for organic light-emitting diodes (OLEDs) based on phenothiazine and phenoxazine were synthesized, and the electro-optical properties of the synthesized materials were examined by UV−vis and photoluminescence spectroscopy, and by cyclic voltammetry. 10,10′-bis(4-tert-butylphenyl)-N7,N7′-di(naphthalen-1-yl)-N7,N7′-diphenyl-10H,10′H-3,3′-biphenoxazine-7,7′-diamine (1-PNA-BPBPOX) showed glass transition temperatures (Tg) of 161 °C, which was higher than that (110 °C) of Tris(N-(naphthalen-2-yl)-N-phenyl-amino) triphenylamine (2-TNATA), a commercial HIL material. The HOMO levels of the synthesized materials were 4.9−4.8 eV, indicating a good match between the HOMO of indium tin oxide (ITO) (4.8 eV) and the HOMO of N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl)benzidine (NPB) (5.4 eV), a common hole transfer layer (HTL) material. Because the synthesized materials showed minimal absorption at wavelengths shorter than 450 nm, they have good potential for use as effective HIL ...