Low-Cost Highly-Robust Hardened Cells Using Blocking Feedback Transistors

CMOS nanometric technologies are increasingly sensitive to soft errors, including SEUs affecting storage cells and SETs initiated in the combinational logic, and eventually captured by some latches or flip- flops. SEUs affecting latches or flip-flops are by far the largest soft error rate (SER) contributor in logic. Thus, developing cost-efficient hardened storage cells to cope with SEUs in latches and flip-flops (but also in some memories difficult to protect by ECC ) is of increasing importance. This paper proposes a new principle for designing low-cost highly robust storage cells and several transistor level implementations.

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