Influence of oxide breakdown position and device aspect ratio on MOSFET's output characteristics

In this work, the influence of oxide breakdown (BD) location on the MOSFET output characteristics has been studied taking into account the devices aspect ratio. The results show that the BD location plays an important role on the device output characteristics for any device geometry. The characteristics have been included on a circuit simulator in order to consider the BD influence on a three stage inverter. The simulation shows that the BD position can play an important role on circuit performance.

[1]  R. Degraeve,et al.  Relation between breakdown mode and breakdown location in short channel NMOSFETs and its impact on reliability specifications , 2001, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).

[2]  M. Nafria,et al.  A function-fit model for the soft breakdown failure mode , 1999, IEEE Electron Device Letters.

[3]  I. Eisele,et al.  Influence of soft breakdown on NMOSFET device characteristics , 1999, 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296).

[4]  W. Abadeer,et al.  Structural dependence of dielectric breakdown in ultra-thin gate oxides and its relationship to soft breakdown modes and device failure , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

[5]  J. Stathis,et al.  A model for gate-oxide breakdown in CMOS inverters , 2003, IEEE Electron Device Letters.

[6]  Bonnie E. Weir,et al.  Soft breakdown at all positions along the N-MOSFET , 2001 .

[7]  G. Guegan,et al.  Collapse of MOSFET drain current after soft breakdown and its dependence on the transistor aspect ratio W/L , 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..