Emission of Terahertz Radiation from Two-Dimensional Electron Systems in Semiconductor Nano- and Hetero-Structures

[1]  Hirokazu Fukidome,et al.  Observation of Amplified Stimulated Terahertz Emission from Optically Pumped Heteroepitaxial Graphene-on-Silicon Materials , 2011 .

[2]  Tetsuya Suemitsu,et al.  Plasmon-resonant microchip emitters and detectors for terahertz sensing and spectroscopic applications , 2010, Defense + Commercial Sensing.

[3]  C. Gaquiere,et al.  AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources , 2010 .

[4]  Hirokazu Fukidome,et al.  Epitaxial Growth Processes of Graphene on Silicon Substrates , 2010 .

[5]  T. Otsuji,et al.  Spectral narrowing of terahertz emission from super-grating dual-gate plasmon-resonant high-electron mobility transistors , 2009 .

[6]  Jiwoong Park,et al.  Ultrafast relaxation dynamics of hot optical phonons in graphene , 2009, 0909.4912.

[7]  T. Otsuji,et al.  Application of plasmon-resonant microchip emitters to broadband terahertz spectroscopic measurement , 2009 .

[8]  Alexander A. Dubinov,et al.  Terahertz Laser with Optically Pumped Graphene Layers and Fabri–Perot Resonator , 2009 .

[9]  M. Ryzhii,et al.  Feasibility of terahertz lasing in optically pumped epitaxial multiple graphene layer structures , 2009, 0908.2488.

[10]  M. Suemitsu,et al.  Observation of carrier relaxation and recombination dynamics in optically pumped epitaxial graphene heterostructures using terahertz emission spectroscopy , 2009, CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference.

[11]  T. Otsuji,et al.  Theoretical Evaluation of Channel Structure in Graphene Field-Effect Transistors , 2009 .

[12]  Maki Suemitsu,et al.  Graphene formation on a 3C-SiC(111) thin film grown on Si(110) substrate , 2009 .

[13]  M. C. Martin,et al.  Broadband electromagnetic response and ultrafast dynamics of few-layer epitaxial graphene , 2009, 0903.0577.

[14]  Thomas Elsaesser,et al.  Ultrafast carrier dynamics in graphite. , 2009, Physical review letters.

[15]  H. Handa,et al.  Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate , 2009 .

[16]  Michael G. Spencer,et al.  Carrier recombination and generation rates for intravalley and intervalley phonon scattering in graphene , 2009, 0901.0274.

[17]  C. Berger,et al.  Ultrafast Relaxation of Excited Dirac Fermions in Epitaxial Graphene Using Optical Differential Transmission Spectroscopy , 2008 .

[18]  V V Popov,et al.  Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems , 2008, Journal of physics. Condensed matter : an Institute of Physics journal.

[19]  M. Shur,et al.  Mechanism of self-excitation of terahertz plasma oscillations in periodically double-gated electron channels , 2008, Journal of physics. Condensed matter : an Institute of Physics journal.

[20]  Taiichi Otsuji,et al.  Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter , 2008, IEICE Trans. Electron..

[21]  F. Rana,et al.  Ultrafast optical-pump terahertz-probe spectroscopy of the carrier relaxation and recombination dynamics in epitaxial graphene. , 2008, Nano letters.

[22]  C. Berger,et al.  Why multilayer graphene on 4H-SiC(0001[over ]) behaves like a single sheet of graphene. , 2008, Physical review letters.

[23]  T. Ando,et al.  Zone-Boundary Phonon in Graphene and Nanotube , 2008 .

[24]  A. Jorio,et al.  Measuring the degree of stacking order in graphite by Raman spectroscopy , 2008 .

[25]  Michael G. Spencer,et al.  Measurement of Ultrafast Carrier Dynamics in Epitaxial Graphene , 2007, 0712.0119.

[26]  Eiichi Sano,et al.  Emission of terahertz radiation from InGaP/InGaAs/GaAs grating-bicoupled plasmon-resonant emitter , 2007 .

[27]  M. Potemski,et al.  Few-layer graphene on SiC, pyrolitic graphite, and graphene: A Raman scattering study , 2007, 0709.2538.

[28]  Andre K. Geim,et al.  The rise of graphene. , 2007, Nature materials.

[29]  Masayoshi Tonouchi,et al.  Cutting-edge terahertz technology , 2007 .

[30]  Eiichi Sano,et al.  Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems , 2006 .

[31]  T. Ando Anomaly of Optical Phonon in Monolayer Graphene , 2006 .

[32]  Michael S. Shur,et al.  Plasma Instability and Terahertz Generation in HEMTs Due to Electron Transit-Time Effect , 2006, IEICE Trans. Electron..

[33]  Norman J. M. Horing,et al.  Anticrossing of plasmon resonances and giant enhancement of interlayer terahertz electric field in an asymmetric bilayer of two-dimensional electron strips , 2006 .

[34]  T. Otsuji,et al.  A grating-bicoupled plasma-wave photomixer with resonant-cavity enhanced structure. , 2006, Optics express.

[35]  Tobias Kampfrath,et al.  Strongly coupled optical phonons in the ultrafast dynamics of the electronic energy and current relaxation in graphite. , 2005, Physical review letters.

[36]  P. Kim,et al.  Experimental observation of the quantum Hall effect and Berry's phase in graphene , 2005, Nature.

[37]  A. Geim,et al.  Two-dimensional gas of massless Dirac fermions in graphene , 2005, Nature.

[38]  David A. Ritchie,et al.  Terahertz quantum cascade lasers—first demonstration and novel concepts , 2005 .

[39]  Michael S. Shur,et al.  Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors , 2005 .

[40]  L. Varani,et al.  Voltage tuneable terahertz emission from a ballistic nanometer InGaAs∕InAlAs transistor , 2005 .

[41]  Mitsuhiro Hanabe,et al.  Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors , 2004 .

[42]  M. Shur,et al.  Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors , 2004 .

[43]  Federico Capasso,et al.  Far-infrared surface-plasmon quantum-cascade lasers at 21.5 μm and 24 μm wavelengths , 2001 .

[44]  Erich Gornik,et al.  PLASMON-BASED TERAHERTZ EMISSION FROM QUANTUM WELL STRUCTURES , 1999 .

[45]  S. Mikhailov Plasma instability and amplification of electromagnetic waves in low-dimensional electron systems , 1998, cond-mat/9801045.

[46]  D. Tsui,et al.  Far‐infrared emission spectroscopy of hot two‐dimensional plasmons in Al0.3Ga0.7As/GaAs heterojunctions , 1995 .

[47]  Shur,et al.  Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current. , 1993, Physical review letters.

[48]  David A. Ritchie,et al.  Plasmon excitation and self‐coupling in a bi‐periodically modulated two‐dimensional electron gas , 1992 .

[49]  R. Miller,et al.  Subpicosecond reflective electro‐optic sampling of electron‐hole vertical transport in surface‐space‐charge fields , 1990 .

[50]  Yasuo Sambe,et al.  Far‐infrared emission from two‐dimensional plasmons in AlGaAs/GaAs heterointerfaces , 1986 .

[51]  Erich Gornik,et al.  Thermal Excitation of Two-Dimensional Plasma Oscillations , 1982 .

[52]  Erich Gornik,et al.  Far infrared emission from plasma oscillations of Si inversion layers , 1980 .

[53]  Taiichi Otsuji,et al.  Population inversion of photoexcited electrons and holes in graphene and its negative terahertz conductivity , 2008 .

[54]  尾辻 泰一 Room temperature terahertz emission from grating coupled two-dimensional plasmons , 2008 .

[55]  尾辻 泰一 Negative dynamic conductivity of graphene with optical pumping , 2007 .

[56]  Tetsuya Suemitsu,et al.  High-performance 0.1-/spl mu/m gate enhancement-mode InAlAs/InGaAs HEMT's using two-step recessed gate technology , 1999 .

[57]  Erich Gornik,et al.  Cyclotron and plasmon emission from two-dimensional electrons in GaAs , 1982 .