论文信息 - Electron transport properties in GaAs at high electric fields

Electron transport properties in GaAs at high electric fields

Abstract Electron distribution function, drift velocity, mean energy, valley population fractions and diffusion coefficient were calculated at high, up to 100 kV/cm, electric fields. Calculations were carried out by the Monte Carlo method. The three-valley model of GaAs conduction band was used. The obtained results were compared with the experimental data.

A. Reklaitis | J. Požela | A. Reklaitis | J. Požela

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