论文信息 - A new technique to fabricate ultra-shallow-junctions, combining in situ vapour HCl etching and in situ doped epitaxial SiGe re-growth - 字舞流文

A new technique to fabricate ultra-shallow-junctions, combining in situ vapour HCl etching and in situ doped epitaxial SiGe re-growth

O. Richard | R. Lindsay | R. Loo | M. Caymax | S. Kubicek | P. Verheyen | F. Holsteyns | P. Meunier-Beillard | I. Peytier