论文信息 - 0.05-µ m-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects - 字舞流文

0.05-µ m-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects

T. Enoki | M. Tomizawa | Y. Umeda | Y. Ishii | Yasunobu Ishii Yasunobu Ishii | Yohtaro Umeda Yohtaro Umeda