论文信息 - Thickness change in an annealed amorphous silicon film detected by spectroscopic ellipsometry - 字舞流文

Thickness change in an annealed amorphous silicon film detected by spectroscopic ellipsometry

A. Jayatissa | M. Aoyama | T. Yamaguchi | Y. Kaneko

[1] E. Palik. Handbook of Optical Constants of Solids , 1997 .

[2] Matthew F. Chisholm,et al. Optical functions of chemical vapor deposited thin‐film silicon determined by spectroscopic ellipsometry , 1993 .

[3] J. Lafait,et al. Effective media equivalent to an asymmetric multilayer and to a rough interface. , 1991, Applied optics.

[4] R. Schulz,et al. Oxidation of HF-treated Si wafer surfaces in air , 1990 .

[5] V. Truong,et al. Optical properties of noble metal/MgF2 multilayered cermets , 1989 .

[6] Bloomer,et al. Optical dispersion relations for amorphous semiconductors and amorphous dielectrics. , 1986, Physical review. B, Condensed matter.

[7] Yamaguchi,et al. Optical properties of well-defined granular metal systems. , 1985, Physical Review B (Condensed Matter).

[8] D. Aspnes,et al. Investigation of effective-medium models of microscopic surface roughness by spectroscopic ellipsometry , 1979 .

[9] Hidetoshi Takahashi,et al. Optical behavior of a metal island film , 1978 .

[10] F. Wooten,et al. Optical Properties of Solids , 1973 .

[11] D. Adler,et al. Tetrahedrally-bonded amorphous semiconductors , 1985 .