Electronic surface barrier characteristics of H-terminated and surface conductive diamond

Abstract Electronic properties of hydrogen terminated diamond have been investigated by comparing the DC and frequency-dependent characteristics of metal–diamond and liquid–diamond interfaces. For this purpose various electronic device structures including Surface Channel FETs and electrodes for investigation in the liquid are fabricated on single crystal diamond substrates with H-induced surface conductive channels. In both experimental configurations (metal and liquid junctions) it has been shown that the p-type H-induced conductive channel is separated from the diamond surface by a thin insulating layer (so-called ‘lossy dielectric’). The measurements only allow a description of the surface layer with electrical parameters. An identification of its physical/chemical nature needs still further analysis.

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