Low frequency noise in fully depleted SOI PMOSFET's

Low frequency noise of fully depleted PMOSFET's on SOI substrates with various channel dopings was measured as a function of substrate-to-source bias. It was found that the device noise is a strong function of the substrate-to-source bias and a window exists in which the device noise is at its minimum. The position of the minimum noise region depends on the channel doping, and its width depends on the buried oxide thickness. Knowledge of the bias conditions under which the transistor will operate are necessary for proper selection of the channel doping for low noise PMOSFET design. >