An 8-Watt 250-3000 MHz Low Noise GaN MMIC Feedback Amplifier with > +50 dBm OIP3

This paper describes a compact GaN MMIC cascode feedback amplifier design which achieves up to 8-Watts of power and IP3 greater than +51 dBm across a decade of BW. The design is made of 0.25um GaN HEMT technology with fT~50 GHz and BVgd > 60V. A 40V-750mA high-bias design achieves an OIP3 of 51.9 dBm, P1dB of 38.5 dBm, and NF ~ 3dB at 2 GHz. A 40V-500mA medium-bias design achieves a lower NF ~ 2.5 dB, an OIP3 of 48.4 dBm and a P1dB of 36.8 dBm. This combination of high linear IP3 and low NF exceeds that achieved by many state-of-the-art PHEMT, HBT and HFET technologies for decade-BW MMIC amplifiers operating in the S- and C-band frequency regime. The cascode approach is used to distribute voltage and self-heating in order to lower the Tj and NF while providing high linearity by operating from a higher supply voltage. These results suggest promise for next generation CATV, FTTX, software defined radio and BTS applications which demand higher linearity and BW to satisfy the high data throughput systems of the future.

[1]  Y.C. Chen,et al.  Broadband GaN Dual-Gate HEMT Low Noise Amplifier , 2007, 2007 IEEE Compound Semiconductor Integrated Circuits Symposium.

[2]  K.W. Kobayashi,et al.  High linearity-wideband PHEMT Darlington amplifier with +40 dBm IP3 , 2006, 2006 Asia-Pacific Microwave Conference.

[3]  G. A. Ellis,et al.  Wideband AlGaN/GaN HEMT MMIC low noise amplifier , 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

[4]  Scott Sheppard,et al.  Commercial GaN Devices For Switching and Low Noise Applications , 2011 .

[5]  K.W. Kobayashi,et al.  A 2 Watt, Sub-dB Noise Figure GaN MMIC LNA-PA Amplifier with Multi-octave Bandwidth from 0.2-8 GHz , 2007, 2007 IEEE/MTT-S International Microwave Symposium.

[6]  D. Yamauchi,et al.  Design and Analysis of Ultra Wideband GaN Dual-Gate HEMT Low-Noise Amplifiers , 2009, IEEE Transactions on Microwave Theory and Techniques.

[7]  Kevin W. Kobayashi,et al.  Multi-decade GaN HEMT Cascode-distributed power amplifier with baseband performance , 2009, 2009 IEEE Radio Frequency Integrated Circuits Symposium.

[8]  Sirenza Microdevices.  Standard 5 V medium power InGaP darlington amplifiers , 2005 .

[9]  M. Wojtowicz,et al.  Wideband Dual-Gate GaN HEMT Low Noise Amplifier for Front-End Receiver Electronics , 2006, 2006 IEEE Compound Semiconductor Integrated Circuit Symposium.

[10]  M. Wojtowicz,et al.  1-Watt Conventional and Cascoded GaN-SiC Darlington MMIC Amplifiers to 18 GHz , 2007, 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium.

[11]  Focus Microwaves.  A high power, high speed 100 MHz programmable tuner , 2005 .

[12]  J.M. Yang,et al.  Wideband AlGaN/GaN HEMT low noise amplifier for highly survivable receiver electronics , 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

[13]  K.W. Kobayashi,et al.  A Cool, Sub-0.2 dB Noise Figure GaN HEMT Power Amplifier With 2-Watt Output Power , 2009, IEEE Journal of Solid-State Circuits.

[14]  M. van Heijningen,et al.  Robust AlGaN/GaN Low Noise Amplifier MMICs for C-, Ku- and Ka-Band Space Applications , 2009, 2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium.

[15]  A. Chini,et al.  A C-band high-dynamic range GaN HEMT low-noise amplifier , 2004, IEEE Microwave and Wireless Components Letters.

[16]  K.W. Kobayashi.  Improved efficiency, IP3-bandwidth and robustness of a microwave Darlington amplifier using 0.5/spl mu/m ED PHEMT and a new circuit topology , 2005, IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05..

[17]  W. Ciccognani,et al.  An ultra-broadband robust LNA for defence applications in AlGaN/GaN technology , 2010, 2010 IEEE MTT-S International Microwave Symposium.