Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with amorphous silicon interface passivation layer and thin HfO2 gate oxide
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Manhong Zhang | V. Tokranov | M. Yakimov | S. Oktyabrsky | I. Ok | W. Tsai | J. Lee | S. Koveshnikov | F. Zhu | G. Thareja | H. Kim | L. Yu | T. Lee