A monolithic dielectrically stabilized voltage controlled oscillator for the millimeter wave range
暂无分享,去创建一个
The design, fabrication, and evaluation of a monolithic 29-GHz dielectrically stabilized voltage-controlled oscillator (DVO) using a MESFET as the active device are described. The novel design yields an oscillator with excellent phase noise behavior and frequency tuning capabilities. A phase noise N/C/sub FM/ of -100 dBc/Hz at 100 kHz off carrier and an output power of+8 dBm without significant deviation over the full tuning range of 45 MHz are obtained. A frequency stability of -6 ppm/ degrees C is measured in the -20 degrees C to +80 degrees C temperature range for a+3 ppm/ degrees C temperature coefficient of the dielectric resonator. The MMIC (monolithic microwave integrated circuit) device is realized using a 0.25- mu m MESFET technology.<<ETX>>
[1] C. Tsironis,et al. Temperature Stabilization of GaAs FET Oscillators using Dielectric Resonators , 1982, 1982 12th European Microwave Conference.
[2] A. Colquhoun,et al. Technology related design of monolithic millimeter-wave Schottky diode mixers , 1992 .
[3] A.P.S. Khanna,et al. A highly-stable 36 GHz GaAS FET DRO with phase-lock capability , 1989 .
[4] U. Guttich. A 23 GHz Dielectric Resonator Stabilized Monolithic MESFET Oscillator , 1991, 1991 21st European Microwave Conference.