论文信息 - Modeling and thermal analysis of silicon infrared emitter based on SOI wafer

Modeling and thermal analysis of silicon infrared emitter based on SOI wafer

Silicon infrared emitter was a key component in the infrared gas detection systems. In this paper, finite element thermal-electric simulation in ANSYS is used to simulate polysilicon infrared emitters based on silicon on insulator (SOI) technology. In the simulation, silicon infrared emitters were studied with respect to power consumption, response time, surface temperature distribution and thermal induced stress. Based on the results and discussion, a new bridge structure is proposed in order to optimize device performance.

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