Detailed models of the MOVPE process
暂无分享,去创建一个
Dimitrios I. Fotiadis | Klavs F. Jensen | T. J. Mountziaris | Triantafillos J. Mountziaris | D. Fotiadis | K. Jensen
[1] G. Scilla,et al. Carbon incorporation in metal-organic vapor phase epitaxy grown gaas from CHxl4-x, HI, and l2 , 1990 .
[2] J. Butler,et al. IR diode laser probing of OMVPE kinetics , 1988 .
[3] Chris R. Kleijn,et al. Return flows in horizontal MOCVD reactors studied with the use of TiO2 particle injection and numerical calculations , 1989 .
[4] Christine A. Wang,et al. Hydrodynamic dispersion in rotating-disk omvpe reactors: Numerical simulation and experimental measurements , 1989 .
[5] K. Jensen,et al. CARS in situ diagnostics in MOVPE: The thermal decomposition of AsH3 and PH3 , 1988 .
[6] T. Kuech,et al. Mechanism of carbon incorporation in MOCVD GaAs , 1984 .
[7] D. Fotiadis,et al. Transport phenomena in vertical reactors for metalorganic vapor phase epitaxy: I. Effects of heat transfer characteristics, reactor geometry, and operating conditions , 1990 .
[8] S. Ghandhi,et al. Deposition of GaAs Epitaxial Layers by Organometallic CVD Temperature and Orientation Dependence , 1983 .
[9] R. Sani,et al. Buoyancy-driven instability in a vertical cylinder: Binary fluids with Soret effect. I - General theory and stationary stability results , 1990 .
[10] R. M. Biefeld,et al. In situ measurement of the metalorganic and hydride partial pressures in a MOCVD reactor using ultraviolet absorption spectroscopy , 1989 .
[11] Richard Pollard,et al. Elementary processes and rate-limiting factors in MOVPE of GaAs , 1988 .
[12] J. Maes,et al. The Effect of the Asymmetric Vortex in Vertical VPE Reactors on Deposition Nonuniformity , 1989 .
[13] D. Fotiadis,et al. Thermophoresis of solid particles in horizontal chemical vapor deposition reactors , 1990 .
[14] M. Yoshida,et al. Mass Spectrometric Study of Ga ( CH 3 ) 3 and Ga ( C 2 H 5 ) 3 Decomposition Reaction in H 2 and N 2 , 1985 .
[15] C. Dulcey,et al. Multiphoton-ionization / mass spectrometric detection of gallium atom during the trimethylgallium CVD reaction , 1986 .
[16] The application of holographic interferometry to the visualization of flow and temperature profiles in a MOCVD reactor cell , 1986 .
[17] V. M. Donnelly,et al. Laser-induced decomposition of triethylgallium and trimethylgallium adsorbed on gallium arsenide(100) , 1989 .
[18] Franz Rosenberger,et al. Three-dimensional modelling of horizontal chemical vapor deposition: I. MOCVD at atmospheric pressure , 1990 .
[19] P. Bontoux,et al. Numerical solution and analysis of asymmetric convention in a vertical cylinder: An effect of Prandtl number , 1989 .
[20] Bhat,et al. Kinetic limits of monolayer growth on (001) GaAs by organometallic chemical-vapor deposition. , 1988, Physical review letters.
[21] Ming L. Yu,et al. Pyrolysis of trimethylgallium on GaAs(100) surfaces , 1990 .
[22] Klavs F. Jensen,et al. Three‐Dimensional Flow Effects in Silicon CVD in Horizontal Reactors , 1988 .
[23] K. Tamaru. The Decomposition of Arsine , 1955 .
[24] G. B. Stringfellow,et al. Reaction mechanisms in the organometallic vapor phase epitaxial growth of GaAs , 1988 .
[25] A. Bottaro,et al. Three-dimensional thermal convection in Czochralski melt , 1989 .
[26] R. Kee,et al. A Mathematical Model of the Gas-Phase and Surface Chemistry in GaAs Mocvd , 1989 .
[27] Rajaram Bhat,et al. Reflectance–difference studies of organometallic chemical vapor deposition growth transients on (001) GaAs , 1989 .
[28] K. Jensen. Transport phenomena and chemical reaction issues in OMVPE of compound semiconductors , 1989 .
[29] M. Keijser,et al. Peculiar asymmetric flow pattern in a vertical axisymmetric VPE reactor , 1988 .
[30] Dimitrios I. Fotiadis,et al. Flow and heat transfer in CVD reactors : comparison of Raman temperature measurements and finite element model predictions , 1990 .
[31] L. J. Giling,et al. Gas Flow Patterns in Horizontal Epitaxial Reactor Cells Observed by Interference Holography , 1982 .