论文信息 - Fabrication of Large-Area Suspended MEMS Structures Using GaN-on-Si Platform

Fabrication of Large-Area Suspended MEMS Structures Using GaN-on-Si Platform

In this letter, piezosensitive elements featuring large-size suspended gallium nitride (GaN) microstructures are fabricated with a two-step dry-release technique using the GaN-on-Si platform. The suspended microstructures are integrated with highly piezosensitive AlGaN/GaN heterostructures as sensing units to realize the GaN-based integrated microsensors. To characterize the residual-stress distribution of the fabricated microstructures, micro-Raman spectroscopy is employed. A microaccelerometer structure with a 250 times 250-mum2 proof-mass area is fabricated with the proposed fabrication technique, and the piezoresponse properties of the integrated sensing elements are characterized through bending experiment.

[1] Soo Jin Chua,et al. Fabrication of deeply undercut GaN-based microdisk structures on silicon platforms , 2007 .

[2] Soo Jin Chua,et al. Micro-Raman probing of residual stress in freestanding GaN-based micromechanical structures fabricated by a dry release technique , 2007 .

[3] Andreas Schober,et al. Piezoelectric actuation of (GaN/)AlGaN/GaN heterostructures , 2008 .

[4] Zhenchuan Yang,et al. GaN on patterned silicon (GPS) technique for GaN-based integrated microsensors , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[5] O. Ambacher,et al. Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications , 2007 .

[6] Stephen J. Pearton,et al. Fabrication and performance of GaN electronic devices , 2000 .

[7] S. Davies,et al. Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices , 2004 .

[8] Oliver Ambacher,et al. Two-dimensional electron gas based actuation of piezoelectric AlGaN/GaN microelectromechanical resonators , 2008 .

[9] Highly sensitive strained AlN on Si(111) resonators , 2009 .

[10] Zhenchuan Yang,et al. Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique , 2006 .

[11] E. Kohn,et al. Piezoelectric GaN sensor structures , 2006, IEEE Electron Device Letters.