26.1% thin-film GaAs solar cell using epitaxial lift-off
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[1] B. J. Wu,et al. Low‐temperature‐processed (150–175 °C) Ge/Pd‐based Ohmic contacts (ρc∼1×10−6 Ω cm2) to n‐GaAs , 1995 .
[2] S. Lau,et al. On the low resistance Au/Ge/Pd ohmic contact to n-GaAs , 1996 .
[3] J. van Deelen,et al. Photon confinement in high-efficiency, thin-film III–V solar cells obtained by epitaxial lift-off , 2006 .
[4] D. Law,et al. 40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells , 2007 .
[5] J. Schermer,et al. A Diffusion and Reaction Related Model of the Epitaxial Lift-Off Process , 2007 .
[6] Martin A. Green,et al. Solar cell efficiency tables (Version 31) , 2008 .
[7] Daniel J. Friedman,et al. 40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions , 2008 .
[8] W. Warta,et al. Solar cell efficiency tables (version 33) , 2009 .