How Does Moisture Affect the Physical Property of Memristance for Anionic–Electronic Resistive Switching Memories?

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 5117 wileyonlinelibrary.com their electronic counterparts, resulting in superior memory storage with fast ns-read/write speeds, low energy consumption, and high retention. [ 2 ] The potential of these ionically controlled resistive switches is amplifi ed by their multiple accessible resistance states even going beyond binary logics. [ 2 ] Although the fi rst demonstration of rapid resistance changes in oxides upon bias pulses dates back to the 1960s, [ 3 ] it was not until 2008 that Strukov and co-workers [ 4 ] connected the experimental results of their fabricated Pt|TiO 2 |Pt resistive switches to the memristor theory by Chua. [ 5 ] Today it is generally accepted that simple metal|oxide|metal structures can show memristive behavior [ 4,5 ] under high local electric fi eld strengths (>10 6 Vm −1 ) [ 2,6 ] and different resistive states can be addressed via the current fl ux history. Mainly two types of oxide-based ReRAMs exist, namely cationic and anionic resistive switches, differing in their type of main ionic-carrier contribution accountable for the memristance. [ 6 ] In anionic–electronic resistive switches the migration of oxygen anions via defects (oxygen vacancies), which is facilitated under high electrical fi elds, is responsible for the controlled resistance changes. These resistive switches operate via local valence changes of the transition metal oxide which is balanced by electronic carriers. The electric conductivity, σ total , for an anionic– electronic resistive switching oxide can be described using the Kröger–Vink notation:

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