Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiС under Electron Beam Irradiation
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T. Bessho | Y. Sugawara | Y. Ishikawa | N. Shibata | Yongzhao Yao | K. Danno | Y. Kawai | H. Suzuki
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T. Bessho | Y. Sugawara | Y. Ishikawa | N. Shibata | Yongzhao Yao | K. Danno | Y. Kawai | H. Suzuki