The development of a high-power cascade BIMOS module is reported. A cascade BIMOS is a Darlington configuration of a high-voltage MOSFET and a bipolar transistor of equal voltage rating, where the MOSFET constitutes the input stage and drives the output-stage bipolar transistor. The module is rated at 500 V, 200 A and is designed for high-power and high-frequency operation. The merits of the module are illustrated by means of various static and dynamic characteristics, ratings and performances.<<ETX>>