Mobility asymmetry in InGaAs/InAlAs heterostructures with InAs quantum wires

Strong asymmetry of electron mobility in InGaAs/InAlAs heterostructures (lattice matched to InP) with the presence of InAs quantum wires was observed. Self-assembled InAs quantum wires, embedded in an InGaAs matrix close to the hetero-interface, has a strong effect in electron conduction in the interface channel. The low temperature mobility for electrons moving parallel to the quantum wires is much higher than that of electrons moving perpendicular to the wires. The asymmetry in mobility is attributed to the difference in scattering cross section of the quantum wires in these two directions.

[1]  D. Fuster,et al.  Electron wave-function spillover in self-assembled InAs/InP quantum wires , 2004 .

[2]  O. Bierwagen,et al.  Weak localization in laterally coupled quantum wires , 2003 .

[3]  Chien-Ping Lee,et al.  Self-assembled GaAs antiwires in In0.53Ga0.47As matrix on (100) InP substrates , 2002 .

[4]  S. Yoon,et al.  Origin of the vertical-anticorrelation arrays of InAs/InAlAs nanowires with a fixed layer-ordering orientation , 2002 .

[5]  Theda Daniels-Race,et al.  Effects of the matrix on self-organization of InAs quantum nanostructures grown on InP substrates , 2002 .

[6]  H. Gutiérrez,et al.  Faceting evolution during self-assembling of InAs/InP quantum wires , 2001 .

[7]  Ricardo Garcia,et al.  Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructures , 2000 .

[8]  W. Masselink,et al.  Growth, structural, and electrical investigation of self-assembled InAs quantum wires on (0 0 1)InP , 2000 .

[9]  Kiev,et al.  Effects of Coulomb Interaction and Tunneling on Electron Transport in Coupled One-Dimensional Systems: From the Ballistic to the Diffusive Regime , 1999, cond-mat/9909171.

[10]  S. Sarma.  KINETIC SURFACE ROUGHENING AND MOLECULAR BEAM EPITAXY , 1993 .

[11]  Chu,et al.  Kinetic surface roughening in molecular beam epitaxy of InP. , 1993, Physical review letters.

[12]  M. Kawashima,et al.  Growth process of III–V compound semiconductors by migration-enhanced epitaxy , 1990 .

[13]  Hiroyuki Sakaki,et al.  Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures , 1980 .

[14]  M. Sugawara.  Self-assembled InGaAs/GaAs, quantum dots , 1999 .