13 – Characterization of Compound Semiconductor Material by Ion Beams
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[1] J. Hovis,et al. Surface analysis by photoionization at very high laser intensities , 1994 .
[2] S. Downey,et al. Sputtering effects in Si, SiO2 and the Si/SiO2 interface , 1993 .
[3] J. L. Moore,et al. Application of sample rotation to secondary ion mass spectrometry depth profiling of aluminum metallization , 1992 .
[4] R. Kopf,et al. Sputtering processes in AlxGa1−xAs and the effects on post-ionization detection , 1992 .
[5] M. Dowsett,et al. Secondary ion mass spectrometry depth profiling of boron, antimony, and germanium deltas in silicon and implications for profile deconvolution , 1992 .
[6] P. Koidl,et al. Raman depth profiling by in situ sputtering , 1991 .
[7] S. Downey,et al. Quantitative depth profiling resonance ionization mass spectrometry of semiconductors with minimum standardization , 1991 .
[8] R. Kopf,et al. Depth profiling resonance ionization mass spectrometry of Be‐doped, layered III–V compound semiconductors , 1990 .
[9] T. Hasenberg,et al. High resolution secondary ion mass spectrometry depth profiling using continuous sample rotation and its application to superlattice and delta‐doped sample analysis , 1990 .
[10] R. Kopf,et al. Secondary‐ion mass spectrometry on δ‐doped GaAs grown by molecular beam epitaxy , 1990 .
[11] J. Berg,et al. Theoretical and experimental studies of the broadening of dilute delta‐doped Si spikes in GaAs during SIMS depth profiling , 1990 .
[12] T. Ambrose,et al. Analysis of MBE grown AI(x)Ga(1-x)As-GaAs heteroepitaxial layers by rutherford backscattering , 1990 .
[13] R. Kopf,et al. Beryllium δ doping of GaAs grown by molecular beam epitaxy , 1990 .
[14] R. Jede,et al. Progress in solids analysis by sputtered neutral mass spectrometry , 1990 .
[15] M. Salvi,et al. Oxygen complexes in III‐V compounds as determined by secondary‐ion mass spectrometry under cesium bombardment , 1989 .
[16] Y. Homma,et al. Effect of matrix composition and impact angle on the fractional ion yield of Be+ sputtered from oxygen‐bombarded silicon and compound semiconductors , 1989 .
[17] M. Meuris,et al. Mass and energy dependence of depth resolution in secondary‐ion mass spectrometry experiments with iodine, oxygen, and cesium beams on AlGaAs/GaAs multilayer structures , 1989 .
[18] D. M. Hrubowchak,et al. Atom Counting at Surfaces , 1989, Science.
[19] A. Galuska,et al. SIMS matrix effects in Alx Ga1 – xAs: Influence of instrumental parameters , 1989 .
[20] J. Stark,et al. Spatial localization of impurities in δ‐doped GaAs , 1988 .
[21] J. P. Gowers,et al. Beryllium diffusion across GaAs/(Al, Ga)As heterojunctions and GaAs/AlAs superlattices during MBE growth , 1987 .
[22] M. Py,et al. Secondary ion mass spectrometry study of oxygen accumulation at GaAs/AlGaAs interfaces grown by molecular beam epitaxy , 1987 .
[23] A. Zalar. Auger electron spectroscopy depth profiling during sample rotation , 1986 .
[24] K. Gillen,et al. Surface analysis of contaminated GaAs: Comparison of new laser‐based techniques with SIMS , 1985 .
[25] G. Morrison,et al. Point-by-point matrix effect calibration for the quantitative analysis of superlattices by secondary ion mass spectrometry , 1984 .
[26] G. Morrison,et al. Matrix calibration for the quantitative analysis of layered semiconductors by secondary ion mass spectrometry , 1983 .
[27] D. Bimberg,et al. Matrix effect and surface oxidation in depth profiling of AlxGa1−xAs by secondary ion mass spectrometry using O+2 primary ions , 1983 .