论文信息 - Determining the normal and lateral dark current components in n-p photodiodes based on p-CdxHg1 − xTe heteroepitaxial structures with x = 0.22 - 字舞流文

Determining the normal and lateral dark current components in n-p photodiodes based on p-CdxHg1 − xTe heteroepitaxial structures with x = 0.22

V. Vasil’ev | S. Dvoretskii | N. Mikhailov | A. Pavlov | D. Protasov | V. Kostyuchenko | V. Varavin