THE EFFECT OF CRYSTALLOGRAPHIC ORIENTATION ON DUCTILE MATERIAL REMOVAL IN SILICON

Abstract In this work the critical chip thickness for ductile regime machining of monocrystalline, electronic-grade silicon is measured as a function of crystallographic orientation on the (0 0 1) cubic face. A single-point diamond flycutting setup allows sub-micrometer, non-overlapping cuts in any direction while minimizing tool track length and sensitivity to workpiece flatness. Cutting tests are performed using chemically faceted, −45° rake angle diamond tools at cutting speeds of 1400 and 5600 mm/s. Inspection of the machined silicon workpiece using optical microscopy allows calculation of the critical chip thickness as a function of crystallographic orientation for different cutting conditions and workpiece orientations. Results show that the critical chip thickness in silicon for ductile material removal reaches a maximum of 120 nm in the [1 0 0] direction and a minimum of 40 nm in the [1 1 0] direction. These results agree with the more qualitative results of many previous efforts.

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