Deposition of Ti-W thin films by magnetron cosputtering

Abstract The W-Ti thin film deposition made by magnetron cosputtering of the cast high-purity W and Ti targets was studied. It is found that the electric resistivity strongly depends on the Ti W ratio in the deposited thin films. The structure of the Ti-W thin films was found to be a solid solution of hcp α-Ti in bcc α-W with a lattice parameter of 0.318–0.323 nm. The Auger spectrometric study showed that the films deposited from the compacted powder Ti-W targets are more contaminated with gaseous impurities and had the higher electrical resistivities compared with the films deposited from the cosputtered cast Ti and W targets.