论文信息 - A 109–137 GHz power amplifier in SiGe BiCMOS with 16.5 dBm output power and 12.8% PAE

A 109–137 GHz power amplifier in SiGe BiCMOS with 16.5 dBm output power and 12.8% PAE

This paper presents a 3-stage differential cascode power amplifier (PA) for 109–137 GHz applications. At 120 GHz the circuit delivers 16.5 dBm saturated output power with 12.8 % power-added efficiency (PAE) without using power combining techniques. The chip was fabricated in 130 nm SiGe BiCMOS technology offering heterojunction bipolar transistors (HBT) with fT/fmax of 300/500 GHz. The PA consists of three stages optimized accordingly to the design goals. The first stage operates in class A to provide high gain while the two following stages are biased in class AB and deep class AB in order to increase the efficiency. The circuit draws a maximum current of 100 mA from 3.3 V and 4 V supplies. It occupies only 0.24 mm2 chip area excluding baluns and bondpads, which makes it attractive for future power combiners. The presented amplifier is suitable for radar applications, that require a high dynamic range.

[1] John D. Cressler,et al. Large-Signal Reliability Analysis of SiGe HBT Cascode Driver Amplifiers , 2015, IEEE Transactions on Electron Devices.

[2] Yuji Yamamoto,et al. A 0.13µm SiGe BiCMOS technology featuring f T /f max of 240/330 GHz and gate delays below 3 ps , 2009 .

[3] Q. J. Gu,et al. A 100–117 GHz W-Band CMOS Power Amplifier With On-Chip Adaptive Biasing , 2011, IEEE Microwave and Wireless Components Letters.

[4] Yong-Zhong Xiong,et al. A D-Band Cascode Amplifier With 24.3 dB Gain and 7.7 dBm Output Power in 0.13 $\mu$m SiGe BiCMOS Technology , 2012, IEEE Microwave and Wireless Components Letters.

[5] Danny Elad,et al. A 17.8 dBm 110–130 GHz Power Amplifier and doubler chain in SiGe BiCMOS technology , 2015, 2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).

[6] Dietmar Kissinger,et al. Scalable sensor platform with multi-purpose fully-differential 61 and 122 GHz transceivers for MIMO radar applications , 2016, 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

[7] Gabriel M. Rebeiz,et al. A 110–134-GHz SiGe Amplifier With Peak Output Power of 100–120 mW , 2014, IEEE Transactions on Microwave Theory and Techniques.