Robust GaN MMIC Chipset for T/R Module Front-End Integration

In this contribution, a set of robust GaN MMIC T/R switches and low-noise amplifiers, all based on the same GaN process, is presented. The target operating bandwidths are the X-band and the 2-18 GHz bandwidth. Several robustness tests on the fabricated MMICs demonstrate state-of-the-art survivability to CW input power levels. The development of high-power amplifiers, robust low-noise amplifiers and T/R switches on the same GaN monolithic process will bring to the next generation of fully-integrated T/R module front-end MMICs. © 2014 IAMOT.

[1]  Walter Ciccognani,et al.  High-power monolithic AlGaN/GaN high electron mobility transistor switches , 2009, International Journal of Microwave and Wireless Technologies.

[2]  P. Romanini,et al.  X-Band GaN-HEMT LNA performance versus robustness trade-off , 2009, 2009 European Microwave Integrated Circuits Conference (EuMIC).

[3]  M. Oppermann,et al.  GaN MMIC based T/R-Module Front-End for X-Band Applications , 2008, 2008 European Microwave Integrated Circuit Conference.

[4]  M. van Heijningen,et al.  X-Band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling , 2008, 2008 IEEE Compound Semiconductor Integrated Circuits Symposium.

[5]  Ernesto Limiti,et al.  Broadband resistive-inductive compensated GaN-HEMT single-FET switch , 2010, The 40th European Microwave Conference.

[6]  Philippe Lacomme.  New trends in airborne phased array radars , 2003, IEEE International Symposium on Phased Array Systems and Technology, 2003..

[7]  M. van Heijningen,et al.  Robust AlGaN/GaN Low Noise Amplifier MMICs for C-, Ku- and Ka-Band Space Applications , 2009, 2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium.

[8]  P. Colantonio,et al.  Development of GaN based MMIC for next generation X-Band space SAR T/R module , 2012, 2012 7th European Microwave Integrated Circuit Conference.

[9]  Christian Wipf,et al.  Highly robust X-band LNA with extremely short recovery time , 2009, 2009 IEEE MTT-S International Microwave Symposium Digest.

[10]  W. Ciccognani,et al.  An ultra-broadband robust LNA for defence applications in AlGaN/GaN technology , 2010, 2010 IEEE MTT-S International Microwave Symposium.

[11]  Niklas Billstrom,et al.  High performance GaN front-end MMICs , 2011, 2011 6th European Microwave Integrated Circuit Conference.

[12]  K. Mouthaan,et al.  GaAs Mixed Signal Multi-Function X-Band MMIC with 7 Bit Phase and Amplitude Control and Integrated Serial to Parallel Converter , 2000, 2000 30th European Microwave Conference.

[13]  G. Ghione,et al.  A compact high performance X-band core-chip with on board serial-to-parallel conversion , 2010, The 40th European Microwave Conference.

[14]  W. Ciccognani,et al.  High-density mixed signal RF front-end electronics for T-R modules , 2012, 2012 IEEE First AESS European Conference on Satellite Telecommunications (ESTEL).

[15]  R. S. Pengelly,et al.  A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs , 2012, IEEE Transactions on Microwave Theory and Techniques.

[16]  W. Heinrich,et al.  Highly Rugged 30 GHz GaN Low-Noise Amplifiers , 2009, IEEE Microwave and Wireless Components Letters.

[17]  A. Bettidi,et al.  High Power Microstrip GaN-HEMT Switches for Microwave Applications , 2008, 2008 European Microwave Integrated Circuit Conference.

[18]  Walter Ciccognani,et al.  High power GaN-HEMT SPDT switches for microwave applications , 2009 .

[19]  Ernesto Limiti,et al.  GaN/AlGaN HEMTs for RF applications , 2009 .

[20]  Walter Ciccognani,et al.  High isolation microstrip GaN-HEMT Single-FET Switch , 2010 .

[21]  V. Kaper,et al.  Monolithic AlGaN/GaN HEMT SPDT switch , 2004 .

[22]  Jonathan B. Hacker,et al.  High power AlGaN/GaN Ku-band MMIC SPDT switch and design consideration , 2008, 2008 IEEE MTT-S International Microwave Symposium Digest.

[23]  H. Shigematsu,et al.  C-Ku band GaN MMIC T/R frontend module using multilayer ceramics technology , 2011, 2011 IEEE MTT-S International Microwave Symposium.

[24]  Walter Ciccognani,et al.  Noise measure-based design methodology for simultaneously matched multi-stage low-noise amplifiers , 2012, IET Circuits Devices Syst..

[25]  A. de Boer,et al.  Highly-integrated X-band multi-function MMIC with integrated LNA and driver amplifier , 2002 .

[26]  A. P. de Hek,et al.  A GaAs Multi-function X-band MMIC for Space-based SAR Application with 7 Bit Phase and Amplitude Control , 1998 .

[27]  T. Lee,et al.  Robust Broadband (4 GHz - 16 GHz) GaN MMIC LNA , 2007, 2007 IEEE Compound Semiconductor Integrated Circuits Symposium.

[28]  G. Tränkle,et al.  Analysis of the Survivability of GaN Low-Noise Amplifiers , 2007, IEEE Transactions on Microwave Theory and Techniques.

[29]  L. Marescialli,et al.  Innovative T/R module in state-of-the-art GaN technology , 2008, 2008 IEEE Radar Conference.

[30]  Antonio Nanni,et al.  Low noise performances of scalable sub-quarter-micron GaN HEMT with Field Plate technology , 2011, 2011 6th European Microwave Integrated Circuit Conference.

[31]  Walter Ciccognani,et al.  High-power monolithic AlGaN/GaN HEMT switch for X-band applications , 2008 .

[32]  F. Giannini,et al.  GaN Device Technology: Manufacturing, Characterization, Modelling and Verification , 2008, 2008 14th Conference on Microwave Techniques.

[33]  M. van Heijningen,et al.  X-Band GaN SPDT MMIC with over 25 Watt Linear Power Handling , 2008, 2008 European Microwave Integrated Circuit Conference.