论文信息 - Direct extraction of MOSFET dynamic thermal characteristics from standard transistor structures using small signal measurements

Direct extraction of MOSFET dynamic thermal characteristics from standard transistor structures using small signal measurements

A method is presented for directly obtaining the temperature rise in MOSFETs due to channel current self-heating. The technique is based on small signal measurements, and also provides thermal time-constant data. No special layout structures are needed, making it suitable for bulk and SOI technologies. Experimental results are compared with data obtained using thermal noise measurements with a special SOI MOSFET, and the two figures show good agreement.

William Redman-White | R.J.T. Bunyan | Michael J. Uren | B. M. Tenbroek | M.S.L. Lee

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