Improved electrical properties using SrTiO3/Y2O3 bilayer dielectrics for MIM capacitor applications

Abstract In this paper, we show that the capacitance–voltage linearity of MIM structures can be enhanced using SrTiO 3 (STO)/Y 2 O 3 dielectric bilayers. The C ( V ) linearity is significantly improved by combining two dielectric materials with opposite permittivity-voltage responses. Three STO/Y 2 O 3 stacks with different thicknesses were realized and compared to a 20 nm STO single layer structure. We observed that an increase in the Y 2 O 3 thickness leads to an improvement in the voltage linearity, while maintaining an overall capacitance density greater than 10 fF/μm 2 .

[1]  J. Winkler,et al.  MIM capacitors using atomic-layer-deposited high-/spl kappa/ (HfO/sub 2/)/sub 1-x/(Al/sub 2/O/sub 3/)/sub x/ dielectrics , 2003, IEEE Electron Device Letters.

[2]  Rainer Waser,et al.  The dielectric response as a function of temperature and film thickness of fiber-textured (Ba,Sr)TiO3 thin films grown by chemical vapor deposition , 1997 .

[3]  Byung Jin Cho,et al.  Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for si analog circuit applications , 2003 .

[4]  Anil U. Mane,et al.  MIM capacitors using amorphous high-k PrTixOy dielectrics , 2005 .

[5]  Melanie W. Cole,et al.  Influence of postdeposition annealing on the enhanced structural and electrical properties of amorphous and crystalline Ta2O5 thin films for dynamic random access memory applications , 1999 .

[6]  Krishna C. Saraswat,et al.  Atomic layer deposition of ZrO2 on W for metal-insulator-metal capacitor application , 2003 .

[7]  Laurent Ulmer,et al.  Optimisation of Surface Capacitance and Leakage Currents on Ion Beam Sputtered SrTiO3-Based MIM Capacitors for Above IC Technology , 2004 .

[8]  Sun Jin Yun,et al.  Improvement in electrical insulating properties of 10-nm-thick Al2O3 film grown on Al/TiN/Si substrate by remote plasma annealing at low temperatures , 2002 .

[9]  S. Blonkowski,et al.  Investigation and modeling of the electrical properties of metal–oxide–metal structures formed from chemical vapor deposited Ta2O5 films , 2001 .

[10]  D.S.H. Chan,et al.  High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics , 2003, IEEE Electron Device Letters.

[11]  S. Chu,et al.  MIM capacitor integration for mixed-signal/RF applications , 2005 .

[12]  Ian W. Boyd,et al.  Electrical property improvements of yttrium oxide-based metal-insulator-metal capacitors , 2006 .

[13]  A. Chin,et al.  A high-density MIM capacitor (13 fF/μm/sup 2/) using ALD HfO2 dielectrics , 2003, IEEE Electron Device Letters.

[14]  A. Chin,et al.  Improvement of voltage linearity in high-/spl kappa/ MIM capacitors using HfO/sub 2/-SiO/sub 2/ stacked dielectric , 2004, IEEE Electron Device Letters.

[15]  Catherine Dubourdieu,et al.  Metal-Insulator-Metal capacitors using Y2O3 dielectric grown by pulsed-injection plasma enhanced metalorganic chemical vapor deposition , 2004 .

[16]  A. Chin,et al.  High-density MIM capacitors using Al 2 O 3 and AlTiO x dielectrics , 2002 .