论文信息 - Determination Of The Elastic Temperature Coefficients Of Monocrystalline Silicon

Determination Of The Elastic Temperature Coefficients Of Monocrystalline Silicon

More accurate sets of linear (first order) elastic temperature coefficients are presented for monocrystalline silicon of a low-doped p-type silicon (p = 4 cm) and high-doped n-type silicon (p = 0.05 cm).

[1] 御子柴宣夫. B. A. Auld : Acoustic Fields and Waves in Solids, Vol. 1 and 2, John Wiley, New York and London, 1973, 2 vols., 23.5×16cm. , 1974 .

[2] N. F. de Rooij,et al. Resonant silicon structures , 1989 .

[3] J. W. Hermann. A Novel Miniature ZT-Cut Resonator , 1985, 39th Annual Symposium on Frequency Control.

[4] H. J. Mcskimin. Measurement of Elastic Constants at Low Temperatures by Means of Ultrasonic Waves–Data for Silicon and Germanium Single Crystals, and for Fused Silica , 1953 .

[5] Yasumasa Okada,et al. Precise determination of lattice parameter and thermal expansion coefficient of silicon between 300 and 1500 K , 1984 .

[6] G. K. White,et al. Linear thermal expansion measurements on silicon from 6 to 340 K , 1977 .

[7] A. Love. A treatise on the mathematical theory of elasticity , 1892 .