Effects of mask pattern transmission on ArF lithographic performance in contact hole patterning

Abstract. Even with the increase in need for next-generation lithography, immersion ArF lithography is still applied to the majority of critical layers. However, as circuit designs shrink, conventional 6% phase-shift mask (PSM) will become difficult to meet the lithography requirements for dense dot pattern compared to dense line pattern. To enhance immersion ArF lithographic performances for dot pattern, high-transmission PSM (High-T PSM) is attracting attention because the transmission of PSM has a significant impact on lithographic performances. From results of transmission dependency evaluated by mask three-dimensional (3D) simulation, it was found that 30% transmission has the best lithographic performances for dense dot. Based on these results, mask blank and mask making process for the new 30% PSM were developed. The results showed good cross-section profile, mask pattern resolution, and defect repairability. In addition, the durability against chemical cleaning and ArF irradiation were also improved. Wafer printability test using negative tone development demonstrated that new PSM has advantages in process window and mask error enhancement factor for dense dots (holes on wafer). Finally, the potential for further application of new PSM was investigated by mask 3D simulation. The results showed that new PSM has lithographic benefits not only for dense dots but also other patterns.