A 800 V dual conduction paths segmented anode LIGBT with low specific on-resistance and small shift voltage

A dual conduction paths segmented anode lateral insulated-gate bipolar transistor (DSA-LIGBT) which uses triple reduced surface field (RESURF) technology is proposed. Due to the hybrid structures of triple RESURF LDMOS (T-LDMOS) and traditional LIGBT, firstly, a wide p-type anode is beneficial to the small shift voltage ( V ST ) and low specific on-resistance ( R on, sp ) when the anode voltage ( V A ) is larger than V ST . Secondly, a wide n-type anode and triple RESURF technology are used to get a low R on, sp when V A is less than V ST . Meanwhile, it can accelerate the extraction of electrons, which brings a low turn-off time (T off ). Experimental results show that: V ST is only 0.9 V, R on, sp ( R on ×Area) are 11.7 and 3.6 Ω · mm 2 when anode voltage V A equals 0.9 and 3 V, respectively, the breakdown voltage reaches to 800 V and T off is only 450 ns.

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