Low-temperature sensitive, compressively strained InGaAsP active (/spl lambda/=0.78-0.85 μm) region diode lasers

This letter reports comparative studies between (Al)GaAs versus InGaAsP active region edge-emitting semiconductor lasers for emission wavelength in the IR regime (/spl lambda/=0.78-0.85 /spl mu/m). High characteristic temperature T/sub 0/(200 K) and T/sub 1/ (450 K) edge-emitting diode lasers have been demonstrated by using the compressively strained (/spl Delta/a/a=0,6%) Al-free (InGaAsP) active region with an emission wavelength of 0.85 /spl mu/m. The high T/sub 0/ and T/sub 1/ a result of low active-layer carrier leakage, will be beneficial for high-temperature and high-power operation. Implementation for InGaAsP-active VCSEL's with compressively strained InGaAsP-active layers and conventional DBR's is also discussed.

[1]  Dan Botez,et al.  High continuous wave power, 0.8 μm-band, Al-free active-region diode lasers , 1997 .

[2]  Richard P. Schneider,et al.  GaInAsP/AlGaInP-based near-IR (780 nm) vertical-cavity surface-emitting lasers , 1995 .

[3]  F. Mederer,et al.  GaAs VCSEL's at /spl lambda/=780 and 835 nm for short-distance 2.5-Gb/s plastic optical fiber data links , 1999, IEEE Photonics Technology Letters.

[4]  John P. R. David,et al.  The influence of trimethylindium impurities on the performance of InAlGaAs single quantum well lasers , 1998 .

[5]  Y. Kokubo,et al.  High-power operation of broad-area laser diodes with GaAs and AlGaAs single quantum wells for Nd:YAG laser pumping , 1991 .

[6]  Ramon U. Martinelli,et al.  High-power (>10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers , 1998 .

[7]  J. A. Lott,et al.  EPITAXIAL DESIGN AND PERFORMANCE OF AlGaInP RED (650–690 nm) VCSELs , 1994 .

[8]  Luke J. Mawst,et al.  m) High-Power InGaAsP-Active Diode Lasers , 1999 .

[9]  R. Bhat,et al.  Organometallic Vapor Phase Epitaxy , 1992 .

[10]  A. Al-Muhanna,et al.  Short-wavelength (0.7 /spl mu/m, 1999 .

[11]  T. Kurokawa,et al.  Using strained (AlxGa1−x)yIn1−yAszP1−z system materials to improve the performance of 850 nm surface- and edge-emitting lasers , 1997 .

[12]  L. Mawst,et al.  Simplified-antiresonant reflecting optical waveguide (S-ARROW)-type VCSELs , 1999, 1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting. IEEE Lasers and Electro-Optics Society 1999 Annual Meeting (Cat. No.99CH37009).

[13]  Harvey B. Serreze,et al.  Reliability of GaAs-based semiconductor diode lasers: 0.6-1.1 mu m , 1993 .