Optical and microwave performance of GaAs-AlGaAs and strained-layer InGaAs-GaAs-AlGaAs graded-index separate-confinement heterostructure single quantum well lasers

The authors have fabricated InGaAs-GaAs-AlGaAs strained-layer graded-index separate-confinement-heterostructure (GRINSCH) quantum-well lasers grown by molecular beam epitaxy (MBE). Use of optimized growth conditions resulted in low-threshold performance. The lasers emit at a wavelength of 1.03 mu m and have threshold currents of 12 mA for 3- mu m*400- mu m devices and threshold current densities of 168 A/cm/sup 2/ for 150- mu m*800- mu m devices. They emit at longer wavelengths and have lower threshold currents than previously reported strained-layer lasers grown by MBE and have threshold currents below those of strained-layer lasers grown by OMVPE (organometallic vapor-phase epitaxy). Measurements of threshold current and microwave modulation response have been performed on strained-layer InGaAs and unstrained GaAs GRINSCH SQW (single-quantum-well) lasers with identical cladding and graded regions grown by molecular beam epitaxy. They confirm the lower threshold currents and higher modulation bandwidths that have been theoretically predicted for strained-layer lasers.<<ETX>>

[1]  G. A. Vawter,et al.  Record low-threshold, single-strained-quantum-well, graded-index, separate-confinement heterostructure laser , 1989 .

[2]  Lester F. Eastman,et al.  Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition , 1986 .

[3]  Amnon Yariv,et al.  Scaling laws and minimum threshold currents for quantum-confined semiconductor lasers , 1988 .

[4]  Lester F. Eastman,et al.  Strained‐layer InGaAs‐GaAs‐AlGaAs graded‐index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy , 1989 .

[5]  S. Fischer,et al.  Ridge waveguide injection laser with a GaInAs strained‐layer quantum well (λ=1 μm) , 1987 .

[6]  Eli Yablonovitch,et al.  Reduction of lasing threshold current density by the lowering of valence band effective mass , 1986 .

[7]  Effect of strain on the band structure of GaAs and In0.2Ga0.8As , 1988 .

[8]  P. J. Caldwell,et al.  Properties of InxGa1−xAs‐GaAs strained‐layer quantum‐well‐heterostructure injection lasers , 1985 .

[9]  L. A. Coldren,et al.  Extremely wide modulation bandwidth in a low threshold current strained quantum well laser , 1988 .

[10]  A. R. Adams,et al.  Band-structure engineering for low-threshold high-efficiency semiconductor lasers , 1986 .

[11]  D. Bour,et al.  Continuous, high‐power operation of a strained InGaAs/AlGaAs quantum well laser , 1988 .

[12]  N. Sugiyama,et al.  Effects of well number, cavity length, and facet reflectivity on the reduction of threshold current of GaAs/AlGaAs multiquantum well lasers , 1988 .

[13]  Yasuhiko Arakawa,et al.  Theory of gain, modulation response, and spectral linewidth in AlGaAs quantum well lasers , 1985 .

[14]  R. M. Kolbas,et al.  Strained-layer InGaAs-GaAs-AlGaAs photopumped and current injection lasers , 1988 .