Analysis of camel gate FET's (CAMFET's)

The performance of camel gate GaAs FET's and its dependence on device parameters has been described. In particular, the dependence of the performance on the doping-thickness product of the p+layer was examined. Theoretical calculations indicate that using large p+doping-thickness products provides relatively voltage-independent transconductances and large reverse breakdown voltages, both of which are desirable in large signal applications. Decreasing the p+doping increases the transconductance, which is desirable in logic applications. Comparison with performance of fabricated devices indicates good agreement between theory and experiment over a wide range of structural parameters. Microwave measurements on CAMFET's have yielded a gain of 10 dB at 9 GHz.