论文信息 - The fundamental absorption edge of AlAs and AlP

The fundamental absorption edge of AlAs and AlP

Abstract The fundamental absorption edge of AlAs and AlP was investigated by optical transmission measurements from 2° to 300°K. The absorption edge in both materials is dominated by indirect optical transitions, and values of E g at 300°K are 2.45 eV for AlP and 2.16 eV for AlAs. The bandgaps at 0° are 2.52 eV and 2.238 eV respectively. The absorption edge structure in AlAs is consistent with the conduction band minima at or near X . It includes impurity-induced bound and free exciton components and phonon-assisted components. The corresponding phonon energies of 13( TA ), 27( LA ) 42( TO ) and 50 meV ( LO ) have been identified in AlAs.

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