Effect of various annealing environments on electrical and optical properties of indium tin oxide on polyethylene napthalate

The effect of different annealing ambients on the electrical and optical properties of indium tin oxide (ITO) on polyethylene napthalate (PEN) has been investigated. ITO layers of different carrier concentrations have been prepared by radio frequency sputtering followed by annealing in either 5% H2∕Ar, oxygen, or air at 150°C for 2h. The carrier concentration of the ITO films increased with heat treatment in the 5% H2∕Ar ambient. However, the carrier concentration of the ITO films decreased with heat treatment in oxygen and air atmospheres, respectively. Different annealing ambients affect the electrical properties of ITO/PEN samples by changing the oxygen vacancy in the ITO layer. Electrical mobilities were found to be affected by the carrier concentration. These experimental mobility values were in good agreement with those obtained from a theoretical ionized impurity scattering mechanism model. Optical transmittances of ∼86% were obtained for the ITO thin films and the optical band gap is about 3.15eV ...

[1]  C. Guillén,et al.  Comparison study of ITO thin films deposited by sputtering at room temperature onto polymer and glass substrates , 2005 .

[2]  C. Weijtens,et al.  INFLUENCE OF ANNEALING ON THE OPTICAL PROPERTIES OF INDIUM TIN OXIDE , 1991 .

[3]  A. Mansingh,et al.  Band-gap narrwing in tin-doped indium oxide films , 1988 .

[4]  K. Chopra,et al.  Transparent conductors—A status review , 1983 .

[5]  A. Djurišić,et al.  Influence of gaseous annealing environment on the properties of indium-tin-oxide thin films , 2005 .

[6]  Alberto Piqué,et al.  Effect of film thickness on the properties of indium tin oxide thin films , 2000 .

[7]  H. Sakata,et al.  Electrical properties of undoped In2O3 films prepared by reactive evaporation , 1980 .

[8]  W. Macdonald,et al.  Engineered Films for Display Technologies , 2004 .

[9]  B. Streetman.  Solid state electronic devices , 1972 .

[10]  Alberto Piqué,et al.  Electrical, optical, and structural properties of indium–tin–oxide thin films for organic light-emitting devices , 1999 .

[11]  G. Frank,et al.  Electrical properties and defect model of tin-doped indium oxide layers , 1982 .

[12]  Lawrence R. Doolittle,et al.  Algorithms for the rapid simulation of Rutherford backscattering spectra , 1985 .

[13]  Wendy D. Bennett,et al.  Ultra barrier flexible substrates for flat panel displays , 2001 .

[14]  H. Hartnagel,et al.  Semiconducting Transparent Thin Films , 1995 .

[15]  R. B. Tahar,et al.  Tin doped indium oxide thin films: Electrical properties , 1998 .

[16]  S. Koh,et al.  Low temperature deposition of ITO thin films by ion beam sputtering , 2000 .

[17]  Ronald P. Howson,et al.  Use of the magnetron-sputtering technique for the control of the properties of indium tin oxide thin films , 1999 .

[18]  E. Burstein.  Anomalous Optical Absorption Limit in InSb , 1954 .

[19]  R. B. Tahar,et al.  Optical, structural, and electrical properties of indium oxide thin films prepared by the sol-gel method , 1997 .

[20]  M. Weaver,et al.  Thin-film permeation-barrier technology for flexible organic light-emitting devices , 2004, IEEE Journal of Selected Topics in Quantum Electronics.

[21]  Terry Alford,et al.  Characterization of the physical and electrical properties of Indium tin oxide on polyethylene napthalate , 2005 .

[22]  R. Dingle.  XCIV. Scattering of electrons and holes by charged donors and acceptors in semiconductors , 1955 .