Instabilities of the reactive sputtering process involving one metallic target and two reactive gases
暂无分享,去创建一个
[1] N. Martin,et al. Use of a theoretical model to investigate RF and DC reactive sputtering of titanium and chromium oxide coatings , 1998 .
[2] M. Futsuhara,et al. Optical properties of zinc oxynitride thin films , 1998 .
[3] R. Cremer,et al. Preparation of a new tetragonal copper oxynitride phase by reactive magnetron sputtering , 1998 .
[4] S. S. Eskildsen,et al. Optical emission spectroscopy on pulsed-DC plasmas used for TiN depositions , 1998 .
[5] L. Pekker. Plasma chemistry model of DC magnetron reactive sputtering in ArO2 gas mixtures , 1998 .
[6] J. Bretagne,et al. Modelling of an reactive magnetron discharge used for deposition of chromium oxide , 1996 .
[7] H. Holleck,et al. Multilayer PVD coatings for wear protection , 1995 .
[8] A. A. Adjaottor,et al. Effect of substrate bias on sputter-deposited TiCx, TiNy and TiCxNy thin films , 1995 .
[9] S. Berg,et al. Modeling of Mass Transport and Gas Kinetics of the Reactive Sputtering Process , 1995 .
[10] S. Berg,et al. Hysteresis effects in the sputtering process using two reactive gases , 1995 .
[11] J. Simmons,et al. Low temperature radio frequency sputter deposition of TiN thin films using optical emission spectroscopy as process monitor , 1994 .
[12] W. Sproul,et al. Reactive unbalanced magnetron sputtering of the nitrides of Ti, Zr, Hf, Cr, Mo, Ti-Al, Ti-Zr and Ti-Al-V , 1993 .
[13] O. Knotek,et al. Process and advantage of multicomponent and multilayer PVD coatings , 1993 .
[14] A. Ricard,et al. Production of N, O and NO in N2-O2 flowing discharges , 1993 .
[15] S. Berg,et al. Reactive sputtering using two reactive gases, experiments and computer modeling , 1993 .
[16] E. Kusano,et al. TiOx film formation process by reactive sputtering , 1992 .
[17] E. Kusano. An investigation of hysteresis effects as a function of pumping speed, sputtering current, and O2/Ar ratio, in Ti‐O2 reactive sputtering processes , 1991 .
[18] S. Hofmann. Target and substrate surface reaction kinetics in magnetron sputtering of nitride coatings , 1990 .
[19] J. Musil,et al. Modeling of inhomogeneous film deposition and target erosion in reactive sputtering , 1990 .
[20] R. Mueller,et al. Advances in partial-pressure control applied to reactive sputtering , 1989 .
[21] V. Poulek,et al. Reactive deposition of hard coatings , 1989 .
[22] H. Blom,et al. Modelling of reactive sputtering of titanium boride , 1989 .
[23] M. Östling,et al. Reactive sputtering of titanium boride , 1989 .
[24] A. G. Spencer,et al. The formation and control of direct current magnetron discharges for the high‐rate reactive processing of thin films , 1989 .
[25] Sören Berg,et al. Process modeling of reactive sputtering , 1989 .
[26] F. Jones. High‐rate reactive sputter deposition of zirconium dioxide , 1988 .
[27] W. D. Westwood,et al. A quasi‐direct‐current sputtering technique for the deposition of dielectrics at enhanced rates , 1988 .
[28] Sören Berg,et al. Predicting thin‐film stoichiometry in reactive sputtering , 1988 .
[29] Sören Berg,et al. Modeling of reactive sputtering of compound materials , 1987 .
[30] H. Blom,et al. The use of nitrogen flow as a deposition rate control in reactive sputtering , 1986 .
[31] H. Blom,et al. Mass flow limitations in reactive sputtering , 1985 .
[32] A. F. Hmiel,et al. Partial pressure control of reactively sputtered titanium nitride , 1985 .
[33] S. Schiller,et al. Deposition of hard wear-resistant coatings by reactive D.C. Plasmatron sputtering , 1984 .
[34] M. D. Hurley,et al. Reactive sputter deposition: A quantitative analysis☆ , 1984 .
[35] C. Aita,et al. Sputter deposition of platinum films in argon/oxygen and neon/oxygen discharges , 1984 .
[36] R. R. Parsons,et al. Mechanisms of voltage controlled, reactive, planar magnetron sputtering of Al in Ar/N2 and Ar/O2 atmospheres , 1984 .
[37] M. Hecq,et al. Preferential ionization in reactive sputtering discharges , 1984 .
[38] G. Lempérière,et al. Influence of the nitrogen partial pressure on the properties of d.c.-sputtered titanium and titanium nitride films , 1984 .
[39] T. Serikawa,et al. Effect of N2Ar mixing on the reactive sputtering characteristics of silicon , 1983 .
[40] M. Marhic,et al. Optical emission from neon/oxygen rf sputtering glow discharges , 1983 .
[41] S. Maniv,et al. Pressure and angle of incidence effects in reactive planar magnetron sputtered ZnO layers , 1982 .
[42] M. Marhic,et al. Argon‐oxygen interaction in rf sputtering glow discharges , 1981 .
[43] W. Class,et al. Preparation of titanium nitride by a pulsed d.c. magnetron reactive deposition techniques using the moving mode of deposition , 1980 .
[44] J. Greene,et al. Mechanisms of reactive sputtering of indium III: A general phenomenological model for reactive sputtering , 1980 .
[45] T. Abe,et al. The deposition rate of metallic thin films in the reactive sputtering process , 1975 .
[46] F. Shinoki,et al. Mechanism of rf reactive sputtering , 1975 .
[47] J. Heller,et al. Reactive sputtering of metals in oxidizing atmospheres , 1973 .