Giant random telegraph signals in the carbon nanotubes as a single defect probe

Giant random telegraph signals (RTSs) are observed in p-type semiconducting single-wall carbon nanotube (SWNT) field-effect transistors (FETs). The RTSs are attributed to the trapping and detrapping of the two defects inside SiO2 or in the interface between SWNT and SiO2. The amplitude of the RTSs is up to 60% of total current. The giant switching amplitude of RTSs is believed to be caused by the strong mobility modulation originated from the charging of the defects in the one-dimensional carbon nanotube channels with an ultrasmall channel width on the order of 1–3 nm. The potential application of RTSs in SWNT as a sensitive probe to study single defects is discussed.

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