论文信息 - High Electron Mobility Transistor (HEMT) based hydrogen sensor for deep-surface applications: Effect of Air and N2 atmosphere - 字舞流文

High Electron Mobility Transistor (HEMT) based hydrogen sensor for deep-surface applications: Effect of Air and N2 atmosphere

A. Randi | T. Moudakir | N. Sama | Y. Halfaya | Md. Iktiham Bin Taher | Thomas Guermont | H. Bouhnane | Mohit Kumar | Mathieu Lazerges | Karim Bouzid | Thi Huong Ngo | Safa Othmani | Jacques Pironon | Simon Gautier