High-resolution small-angle x-ray diffraction studies of evaporated silicon and germanium layers

Measurements on evaporated single layers and multilayers of silicon and germanium were carried out using a triple-crystal x-ray diffractometer with perfect Si(111) crystals as a monochromator and analyser. The very high resolution of the triple-crystal diffractometer allows a precise determination of the structural and optical parameters of the layers. The parameters were obtained by fitting a modified Parratt model to the experimental data.

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