Piezoresistive characteristics of short-channel MOSFETs on (100) silicon

This paper demonstrates that the intrinsic piezoresistive response of the MOSFET channel is independent of length. The reported fall-off of the piezoresistive response of the transistor in short channel devices is shown to be the result of parasitic series resistance in the source of the transistor. At the same time, the experimental results demonstrate that the threshold voltage of the devices is essentially independent of stress. The results are verified for three independent processes.

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