论文信息 - Application of high uniaxial strain methods for semiconductor parameter determination - 字舞流文

Application of high uniaxial strain methods for semiconductor parameter determination

V. Kolomoets | V. Ermakov | P. Nazarchuk | S. Fedosov | L. Panasyuk | B. Orasgulyev

[1] S. Budzulyak,et al. Correlated increase of ε2‐ and ε1‐conductivity energies under strain‐induced metal–insulator transition in n‐Ge(Sb) , 2004 .

[2] T. A. Kudykina,et al. Breakdown of Impurity States of As and Sb in Germanium at Uniaxial Compression , 1984 .

[3] V. Ermakov,et al. The deformation potentials of the X-valleys of the germanium conduction band , 1983 .

[4] V. Kolomoets,et al. The determination of the deformation potential constants in n‐germanium , 1971 .

[5] V. Kolomoets,et al. Investigation of the resistance and magnetoresistance in uniaxially stressed n-germanium , 1970 .