Quantitative infrared characterization of plasma enhanced CVD silicon oxynitride films

Abstract The preparation of insulating materials as Silicon Oxynitride films by PECVD technique deals with many parameters. In order to improve the growing conditions, many samples must be prepared and we need to know rapidly the sample composition. In this paper, using the exact chemical composition as a calibration we present a rapid procedure which yields, from the I.R. absorption spectrum, the approximate Si O x N y H z composition.