Preparation of thin-film transistors with chemical bath deposited CdSe and CdS thin films

The authors have fabricated the thin-film transistor (TFT) with CdSe and CdS semiconductor thin films, prepared by a low temperature chemical bath deposition (CBD) method, as an active layer. The ON-current values of the CdSe-TFTs and CdS-TFTs at a gate bias of 10 V and a source-drain voltage of 10 V are about 100 /spl mu/A and 5 /spl mu/A, respectively. The OFF-current values of the CdSe-TFTs and CdS-TFTs at the source-drain voltage of 10 V are less than 10 pA. The fabricated CdSe-TFTs exhibited a field effect mobility of 15 cm/sup 2//V-s, threshold voltage of 3.5 V, subthreshold slope of 0.5 V/dec., and ON/OFF current ratios exceed 10/sup 7/. A field effect mobility of I cm/sup 2//V-s, a threshold voltage of 2.6 V, a subthreshold slope of 0.6 V/dec., and an ON/OFF current ratios exceed 10/sup 6/ were observed for CdS TFTs.