PT-IGBT PSpice model with new parameter extraction for life-time and epy dependent behaviour simulation

IGBT PSpice models recently proposed do not give satisfactory simulation results of the behaviour of punch-through (PT) IGBTs. The reason can be attributed to the incorrect modelling of the particular epitaxial structure of the intrinsic PNP of the IGBT. In particular, the most critical behaviour to simulate accurately is the turn-off since such a transient is strongly influenced by the lifetime of the minority carriers and the reapplied voltage on the collector of the bipolar part of the IGBT. An improved IGBT PSpice model is presented aiming at overcoming the incompleteness of other models. A detailed procedure describing the parameter extraction of the model by new methods is also developed. The proposed model is validated by comparing several simulation runs with experimental traces on both static and dynamic conditions for both fast and slow IGBTs at different working conditions.